1-nm-thick epitaxial AlN passivation for highly efficient flexible InGaN red micro-LEDs
K
Kiho Kong
J
Jun Hee Choi
J
Joo Hun Han
E
Eunsung Lee
J
Jinjoo Park
N
Nakhyun Kim
J
Jaewoo Lee
C
Chanyoung Shin
J
Jung Hun Park
D
Dong-Chul Shin
J
Joosung Kim
S
Sunil Kim
T
Tae-Gon Kim
(Samsung Advanced Institute of Technology, Samsung Electronics)
S
Seokho Yun
M
Miyoung Kim
Article Details
Journal
Nature Communications
Volume / Issue
Vol. 16, Issue 1
Published
July 01, 2025
ISSN
2041-1723
Publisher
Nature Portfolio
Authors (15)
K
Kiho Kong
J
Jun Hee Choi
J
Joo Hun Han
E
Eunsung Lee
J
Jinjoo Park
N
Nakhyun Kim
J
Jaewoo Lee
C
Chanyoung Shin
J
Jung Hun Park
D
Dong-Chul Shin
J
Joosung Kim
S
Sunil Kim
T
Tae-Gon Kim
Samsung Advanced Institute of Technology, Samsung Electronics
S
Seokho Yun
M
Miyoung Kim
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