Duong, N. T., Krishna, S., Nguyen, M. C., Kim, H. S., Lam, V. T., Gul, H. Z., Choi, S. H., Kim, M., Lee, D., Tran, T. U., Dat, V. K., Do, V. D., Hoang, V. H., Rho, H., Kim, Y., Yu, W. J., Kim, K. K., Lim, S. C. (2026). Ultrafast switching and high-endurance nonvolatile memory enabled by intrinsic switchable polarization in semiconducting Janus monolayers. Nature Communications. https://doi.org/10.1038/s41467-026-73279-7