Ge, X., Qie, H., Guo, X., Zhong, Y., Chen, X., Gao, H., Zhou, Y., Li, Q., Sun, Q., Yang, H. (2025). Self-aligned implanted mesa termination enables a high BFOM of 1.64 GW/cm2 and non-edge junction breakdown for vertical GaN SBDs. Applied Physics Letters. https://doi.org/10.1063/5.0282412