Gong, R., Sun, N., Qiao, G., Peng, Y., Guo, H., An, J., Shao, P., Ye, J., Zhang, R., Zheng, Y., Chen, D. (2026). Robust Vth stability in normally off GaN HEMTs with a stacked p
                    <b>+</b>
                    /p
                    <b>−</b>
                    -NiO gate: Suppression of interface trapping and electric-field crowding. Applied Physics Letters. https://doi.org/10.1063/5.0312146