Hunger, B., Horn, M. M., Röck, E., Villalva, D. R., Bynens, L., Vanderspikken, J., Kousseff, C., Gobeil, S., Bardagot, O., Akmanşen‐Kalayci, N., Tolbert, S. H., McCulloch, I., Maes, W., Tsokkou, D., Banerji, N. (2026). Resistance to Overdoping Allows Over 2000 S cm
                    <sup>−1</sup>
                    Conductivity in P(g
                    <sub>3</sub>
                    BTTT) With Anion‐Exchange Doping. Advanced Materials. https://doi.org/10.1002/adma.202523635