Zunke Liu, Changqing Lin, Yueying Zhang, Yuqi Zhang, Yihui Xie, Sheshicheng Chen, Hongkai Zhou, Zedong Lin, Wei Liu, Mingdun Liao, Chuanxiao Xiao, Zhiqin Ying, Xi Yang, Zhenhai Yang, Yuheng Zeng, Jichun Ye. "Nitrogen‐Incorporated Silicon Dioxide Interlayer Enables Pinhole‐Reduced and Robust TOPCon With a High Implied Open‐Circuit Voltage over 760 mV." Advanced Materials, 2026. doi:10.1002/adma.73918