Iguchi, H., Narita, T., Ito, K., Iwasaki, S., Kano, E., Ikarashi, N., Tomita, K., Kikuta, D. (2026). Negative-bias temperature instability in AlSiO/p-type GaN metal-oxide-semiconductor field-effect transistors with ultrathin AlN interfacial layer. Journal of Applied Physics. https://doi.org/10.1063/5.0325347