Tamura, A., Imaida, H., Maekawa, H., Kita, K. (2026). Low-temperature (600 °C) formation of Al2O3/
                    <b>
                      <i>β</i>
                    </b>
                    -Ga2O3 interface with low interface state density employing substrate-surface O3 treatment processes. Applied Physics Letters. https://doi.org/10.1063/5.0324499