Lee, K. J., Hadid, J., Banerjee, S., Nuytten, T., Lingaparthi, R., Hahn, H., Beer, S. M. J., Khan, M. A., Geens, K., Decoutere, S., Langer, R., Vohra, A. (2025). Low-stress MOCVD-grown 15 μm GaN layers on 200 mm engineered substrates with minimal wafer bow. Applied Physics Letters. https://doi.org/10.1063/5.0312962