Tian, X., Renz, A. B., Yildirim, M. A., Melnyk, K., Iosifidis, N., Jefferies, R., Pain, S., Walker, D., Gott, J. A., Agbo, N. S., Taylor, P., Boccarossa, M., Maresca, L., Irace, A., Shah, V. A., Antoniou, M., Mawby, P. A., Gammon, P. M. (2026). Investigation of temperature-dependent oxide capacitance in paraelectric monoclinic doped HfO2/SiO2 gate stacks implemented on 4H-SiC. Applied Physics Letters. https://doi.org/10.1063/5.0315887