Narita, T., Ito, K., Iguchi, H., Tomita, K., Horita, M., Iwasaki, S., Kikuta, D. (2026). Investigation of Coulomb scattering centers using a substrate bias effect in
                    <i>n</i>
                    -channel metal–oxide–semiconductor field-effect transistors with AlSiO/AlN/
                    <i>p</i>
                    -type GaN gate structures. Journal of Applied Physics. https://doi.org/10.1063/5.0324229