Duan, Z., Zong, S., Xu, L., Xie, Z., Niu, W., Zeng, P., Liao, L., Liu, X. (2026). <i>In situ</i>
                    interface engineering enabled high-performance InSnO thin-film transistor incorporating ultrathin Y2O3 layer. Applied Physics Letters. https://doi.org/10.1063/5.0307574