Fei-Yang Chen, Min-Han Mi, Peng-Fei Wang, Xiang-Xin Cao, Xiang Du, Jing-Yun Yao, Mao-Teng Lu, Dong-Xu Xiao, Lin-An Yang, Xiao-Hua Ma, Yue Hao. "High-performance Ka-band AlN-buffer GaN HEMTs with enhanced dynamic and breakdown characteristics achieving 10.05 W/mm
                    <i>P</i>
                    sat and 53.05% PAE." Applied Physics Letters, 2026. doi:10.1063/5.0325158