Yang, H., Yang, X., Yang, H., Zhang, K., Chen, Z., Wu, J., Fu, X., Wu, F., Liu, X., Feng, Y., Zhang, X., Wang, Y., Kang, X., Ju, G., Xu, F., Tang, N., Wang, X., Shen, B. (2026). High-mobility AlGaN/GaN heterostructures directly grown on diamond (111) substrates using a high-temperature physical-vapor-deposition AlN nucleation layer. Applied Physics Letters. https://doi.org/10.1063/5.0315800