Masahiro Hara, Takuma Kobayashi, Mikito Nozaki, Heiji Watanabe. "GaO<i>x</i> interlayer-originated hole traps in SiO2/<i>p</i>-GaN MOS structures and their suppression by low-temperature gate dielectric deposition." Applied Physics Letters (2025). https://doi.org/10.1063/5.0246368