Guodong Zhang, Hongdi Wu, Xiao Xu, Sinan Lin, Zhidong Zhang, Zhibo Yan, Xubing Lu, Guoliang Yuan, Jun-Ming Liu. "Enhanced reliability of Hf0.5Zr0.5O2 ferroelectric memory through WOx buffer layer to minimize oxygen vacancies." Applied Physics Letters (2025). https://doi.org/10.1063/5.0284623