Magendar, V., Chen, Y., Lu, A., Kang, D., Connelly, D., Hytha, M., Takeuchi, H., Mears, R., Wong, H. Y. (2026). Electron and hole surface roughness scattering-limited mobilities in oxygen-inserted (OI) Si channel. Journal of Applied Physics. https://doi.org/10.1063/5.0316691