Zhang, J., Hasan, M. T., Mondal, S., Ye, Z., Liu, J., Tanim, M. M. H., Chen, Y., Lee, S., Shin, D., Li, Y., Sun, K., Mi, Z. (2025). Beryllium-incorporated ScAlN/GaN HEMTs with low off-current and high current stress stability. Applied Physics Letters. https://doi.org/10.1063/5.0270230