Jiang, Z., Liu, Z., Liu, T., Cao, H., Yuvaraja, S., García, G. I. M., Wang, C., Miranda-Cortez, P. A., Solay, L. R., Ren, K., Melinte, G., Florica, C., Kumar, M., Li, X. (2026). Atomic layer etching-enabled interface engineering for reduced subthreshold swing and improved uniformity in p-channel GaN MOSFETs. Applied Physics Letters. https://doi.org/10.1063/5.0319913